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TLP665J(S)
TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRIAC
TLP665J(S)
OFFICE MACHINE HOUSEHOLD USE EQUIPMENT TRIAC DRIVERSOLID STATE RELAY
TOSHIBA TLP665J(S) consists of a photo-triac optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP package. * * * * * * * * Peak Off-State Voltage Trigger LED Current On-State Current Isolation Voltage UL Recognized SEMKO Approved BSI Approved Option(D4)type VDE Approved Maximum Operating Insulation Voltage Highest Permissible Over Voltage : DIN VDE0884 Certificate No.101399 : 890VPK :8000 VPK : 600V(Min) : 10mA(Max) : 100mA(Max) : 5000Vrms(Min) : UL1577,File No.E67349 : SS EN60065, File No.9841102 SS EN60950, File No.9841102 : BS EN60065, File No.8385 BS EN60950, File No.8386 JEDEC TOSHIBA Weight: 0.39 g : mm
11-7A9
(Note)When a VDE0884 approved type is needed, Option(D4)" please designate the "Option(D4)"
*Construction Mechanical Rating
7.62 mm pich standard type Creepage Distance Clearance Insulation Thickness 7.0 mm (Min) 7.0 mm (Min) 0.5 mm (Min) 10.16 mm pich TLPXXXF type 8.0 mm (Min) 8.0 mm (Min) 0.5 mm (Min)
PIN CONFIGURATION (TOP VIEW) 1 2 3 4 6
1: ANODE 2: CATHODE 3: N.C. 4:TERMINAL1 6:TERMINAL2
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TLP665J(S)
MAXIMUM RATINGS(Ta=25C)
CHARACTERISTIC Forward Current LED Forward Current Derating (Ta53C) Peak Forward Current (100s pulse, 100pps) Reverse Voltage Off-State Output Terminal Voltage On-State RMS Current DETECTOR On-State Current Derating (Ta25C) Peak On-State Current (100s pulse, 120pps) Peak Nonrepetitive Surge Current Junction Temperature Operating Temperature Range Storage Temperature Range Lead Soldering Temperature (10s) Isolation Voltage (AC,1min. , R.H.60%) (Note 2) (Pw=10ms,DC=10%) Ta=25C Ta=70C IT/C ITP ITSM Tj Topr Tstg Tsol BVS SYMBOL IF IF /C IFP VR VDRM IT(RMS) RATING 50 -0.7 1 5 600 100 50 -1.1 2 1.2 115 -40~100 -55~125 260 5000 mA /C A A C C C C Vrms UNIT mA mA /C A V V mA
(Note 2)Pins1,2 and 3 shorted together and pin4 and pin6 shorted together.
RECOMMENDED OPERATING CONDITIONS
CHARACTERISTIC Supply Voltage Forward Current Peak On-State Current Operating Temperature SYMBOL VAC IF ITP Topr MIN. TYP. MAX. 240 25 1 85 UNIT Vac mA A C
--
15
--
20
--
-25
--
--
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TLP665J(S)
ELECTRICAL CHARACTERISTICS(Ta=25C)
CHARACTERISTIC Forward Voltage LED Reverse Current Capacitance DETECTOR Peak Off-State Current Peak On-State Voltage Holding Current Critical Rate of Rise of Off-State Voltage Critical Rate of Rise of SYMBOL VF IR CT IDRM VTM IH dv/dt dv/dt(c) TEST CONDITION IF = 10 mA VR = 5 V V = 0, f=1MHz VDRM=600V ITM=100mA -- Vin=240Vrms , Ta=85C Vin=60Vrms , IT=15mA (Note3) (Note3) MIN. 1.0 TYP. 1.15 MAX. 1.3 10 -- 1000 3.0 UNIT V A pF nA V mA V/s V/s
-- -- -- -- -- -- --
--
30 10 1.7 1.0 500 0.2
-- --
--
Commutating Voltage
COUPLED ELECTRICAL CHARACTERISTICS(Ta=25C)
CHARACTERISTIC Trigger LED Current Capacitance (Input to Output) Isolation Resistance SYMBOL IFT CS RS TEST CONDITION VT=6V VS=0 , f=1MHz VS=500V AC , 1minute Isolation Voltage BVS AC , 1second,in oil DC , 1minute,in oil MIN. TYP. 5 0.8
12
MAX. 10
UNIT mA pF 9 Vrms Vdc
-- --
1x10
-- -- -- -- --
10
14
5000
-- 10000 10000
-- --
(Note 3)dv/dt TEST CIRCUIT
Rin + Vcc -- 3 4 RL 4k9 dv/dt(c) dv/dt 0V 1209 2 1 6 Vin +5V , VCC
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TLP665J(S)
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TLP665J(S)
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TLP665J(S)
RESTRICTIONS ON PRODUCT USE
000707EBC
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. * The products described in this document are subject to the foreign exchange and foreign trade laws. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice.
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